University of Illinois University of Illinois at Urbana - Champaign

Publications

April 2023
Edmund G. Seebauer

University of Illinois
Department of Chemical and Biomolecular Engineering
600 S. Mathews Avenue, Urbana, Illinois 61801-3792
Phone: 217-244-9214, Fax: 217-333-5052
e-mail: eseebaue@illinois.edu
https://seebauer-lab.chbe.illinois.edu


Education

1983 B.S. Chemical Engineering, University of Illinois-Urbana
1986 Ph.D. Chemical Engineering, University of Minnesota
1987 Postdoctoral Associate, Sandia National Laboratories-Albuquerque


Professional Experience (all at the University of Illinois at Urbana-Champaign)

1988-94 Assistant Professor of Chemical Engineering
1994-97 Associate Professor of Chemical Engineering
1997-19 Professor of Chemical Engineering
2005-06 Interim Head of Chemical and Biomolecular Engineering
2006-19 James W. Westwater Professor of Chemical and Biomolecular Engineering
2006-11 Head of Chemical and Biomolecular Engineering
2011-14 Provost Fellow (International Academic Programs)
2019- James W. Westwater Professor Emeritus of Chemical & Biomolecular Engineering


Awards

1988 NSF Presidential Young Investigator Award
1988 Dow Teaching Excellence Award
1989 DuPont Young Faculty Award
1989, 91 Observer for United States, IUPAC General Assembly
1994 Alfred P. Sloan Research Fellow (Chemistry)
1995 Inventor Recognition Award, Semiconductor Research Corporation
1996 Teaching Excellence Award, School of Chemical Sciences, UIUC
2000 Fellowship for Study in a Second Discipline (Philosophy), UIUC
2001 Fellow, AVS: the Science & Technology Society
2004-06 IEEE Electron Device Society Distinguished Lecturer
2004 Beckman Associate, Center for Advanced Study, UIUC
2005 Excellence in Advising Award, College of Engineering, UIUC
2007 Fellow, American Association for the Advancement of Science
2008 Fellow, American Physical Society
2008 Triennial Paper Prize for Theory/Methodology, J. Process Control (with 7 co-authors)
2011 Fellow, American Institute of Chemical Engineers


Books

  1. Edmund G. Seebauer and Robert L. Barry, Fundamentals of Ethics for Scientists and Engineers (Oxford Univ. Press, New York, 2001), 270 pp. With instruction manual, 180 pp. Translated into Korean (Kyungpook Univ. Press, Daegu, 2013).
  2. Edmund G. Seebauer and Meredith C. Kratzer. Charged Defects in Semiconductors: Structure, Thermodynamics, and Diffusion. Engineering Materials and Processes Series. London, Springer-Verlag, 2009.
  3. Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, and Yevgeniy V. Kondratenko (eds.), 17th International Conference on Ion Implantation Technology, Monterey, CA, 8-13 June 2008, AIP Conference Proceedings (Materials Physics and Applications), Vol. 1066 (AIP, New York, 2009).


Book Chapters, Invited Reviews, and Trade Publications

  1. M. A. Mendicino, R. P. Southwell and E. G. Seebauer, “Chemical Vapor Deposition of TiSi2 Using SiH4 and TiCl4,” Thin Solid Films, 253 (1994) 473-478.
  2. E. G. Seebauer and C. E. Allen, “Estimating Surface Diffusion Coefficients,” Progr. Surf. Sci., 49 (1995) 265-330.
  3. R. P. Southwell, M. A. Mendicino and E. G. Seebauer, “Optimization of Selective TiSi2 CVD by Mechanistic Chemical Kinetics,” J. Vac. Sci. Technol., A14 (1996) 928-934.
  4. I. I. Suni and E. G. Seebauer, “Surface Self-Diffusion at High Temperatures: New Simulational Insights,” Thin Solid Films, 272 (1996) 229-234.
  5. E. G. Seebauer and R. Ditchfield, “Fixing Hidden Problems with Thermal Budget,” Solid State Technol., 40 (1997) 111-120.
  6. E. G. Seebauer and C. E. Allen, “Surface Diffusion,” in: Landolt-Börnstein Numerical Data and Functional Relationships: Diffusion in Semiconductors, Vol. III/33A, ed. D. L. Beke, (Springer Verlag, New York, 1998) Ch. 7.
  7. E. G. Seebauer and C. E. Allen, “Surface Diffusion,” in: Landolt-Börnstein Numerical Data and Functional Relationships: Diffusion in Nonmetallic Solids, Vol. III/33B, ed. D. L. Beke, (Springer Verlag, New York, 1999) Ch. 12.
  8. E. G. Seebauer and M. Y. L. Jung, “Surface Diffusion of Adsorbates on Metals, Alloys, Oxides and Semiconductors,” in: Landolt-Börnstein Numerical Data and Functional Relationships: Adsorbed Layers on Surfaces, Vol. III/42A, ed. H. P. Bonzel, (Springer Verlag, New York, 2001) Ch. 11.
  9. E. G. Seebauer, “When Do You Blow the Whistle?” Chemical Engineering, 108 (April, 2001) 123-126.
  10. E. G. Seebauer and H. Y. H. Chan, “Microelectronics Research in Chemical Engineering: A Metaphorical View,” Reviews in Chemical Engineering, 18 (2002) 1-47.
  11. Edmund G. Seebauer, “Whistleblowing: Is It Always Obligatory?” Chemical Engineering Progress, 100 (2004) 23-27.
  12. Edmund G. Seebauer and Charlotte T. M. Kwok, “Microelectronics Fabrication,” in Encyclopedia of Chemical Processing, ed. Sunggyu Lee (Taylor & Francis, 2005).
  13. R. D. Braatz, R. C. Alkire, E. G. Seebauer, E. Rusli, R. Gunawan, T. O. Drews, X. Li, and Y. He, “Perspectives on the Dynamics and Control of Multiscale Systems,” J. Process Control, 16 (2006) 193-204.
  14. Edmund G. Seebauer and Meredith C. Kratzer, “Charged Point Defects in Semiconductors,” Materials Science & Engineering R, 55 (2006) 57-149.
  15. R. D. Braatz, R. C. Alkire, E. G. Seebauer, T. O. Drews, E. Rusli, M. Karulkar, F. Xue, Y. Qin, M. Y. L. Jung and R. Gunawan, “A Multiscale Systems Approach to Microelectronic Processes,” Comp. & Chem. Eng., 30 (2006) 1643-1656.
  16. R. D. Braatz, R. C. Alkire and E. G. Seebauer, “Multiscale Modeling and Design of Electrochemical Systems,” in Electrochemical Surface Modification – Thin Films, Functionalization and Characterization, Advances in Electrochemical Science and Engineering, ed. R. C. Alkire, D. M. Kolb, J. Lipkowski, and P. N. Ross (Wiley-VCH, Weinheim, Germany, 2008) 10, Ch. 4, pp. 289-334.
  17. Edmund G. Seebauer, Paul J. A. Kenis and Marina Miletic, “Chemical Engineering at Illinois,” Chemical Engineering Education, 43 (2009) 179-185.
  18. Edmund G. Seebauer and Prashun Gorai, “Formation of Ultra-Shallow Junctions,” Comprehensive Semiconductor Science & Technology, ed. Roberto Fornari (Elsevier, Amsterdam, 2010) 4, Ch. 4, pp 86-131.
  19. Edmund G. Seebauer and Kyong Wook Noh, “Trends in Semiconductor Defect Engineering at the Nanoscale,” Materials Science & Engineering R, 70 (2010) 151-168.
  20. Edmund G. Seebauer, “Fundamentals of Ethics: The Use of Virtues,” Practical Ethics for the Food Professional, ed. J. Peter Clark and Christopher Ritson (Wiley-Blackwell, 2013) Ch. 1.
  21. Edmund G. Seebauer and D. Eitan Barlaz, “SIMS for Analysis of Nanostructures,” Current Opinion in Chemical Engineering, 12 (2016) 8-13.


Patents

  1. M. A. Mendicino and E. G. Seebauer, "Selective Low-Temperature Chemical Vapor Deposition of Titanium Disilicide onto Silicon Regions," U.S. Patent No. 5,633,036 issued 5/27/1997.
  2. E. G. Seebauer, R. D. Braatz, M. Y. L. Jung and R. Gunawan, "Methods for Controlling Dopant Concentration and Activation in Semiconductor Structures," U.S. Patent No. 7,846,822 issued 12/7/2010.
  3. E. G. Seebauer, "Preparation of Ultra-shallow Semiconductor Junctions Using Intermediate Temperature-ramp Rates and Solid Interfaces for Defect Engineering," U.S. Patent No. 7,968,440 issued 6/28/2010.
  4. E. G. Seebauer, "Defect Engineering in TiO2 via Surfaces," U.S. Patent No. 8,871,670 issued 10/28/2014.
  5. Edmund G. Seebauer and Prashun Gorai, “Composition Comprising an Engineered Defect Concentration,” U.S. Patent No. 10,161,062 issued 12/25/2018.
  6. Edmund G. Seebauer, “Method of Controlling Oxygen Vacancy Concentration in a Semiconducting Metal Oxide,” Nonprovisional US Patent Application 17/571858 filed Jan 2022.
  7. Christopher R. Hatem, Michael Noel Kennedy, Joseph C. Olson and Edmund G. Seebauer, "Plasma Assisted Damage Engineering during Ion Implantation," US Patent Application Filed Nov 2022.
  8. Christopher R. Hatem, Michael Noel Kennedy, Joseph C. Olson and Edmund G. Seebauer, "Multiprocess Substrate Treatment for Enhanced Substrate Doping," US Patent Application Filed Nov 2022.
  9. Edmund G. Seebauer, "Purified Surface Region of an Oxide Semiconductor, and Method of Near-Surface Purification," US Provisional Patent Application 63/460,505 Filed Apr 2023.


Refereed Journal Publications

  1. Edward P. Duliba, Edmund G. Seebauer and R. L. Belford, “Nuclear Quadrupole Coupling in an EPR Investigation of a Low-Spin Cobalt (II) System,” J. Magnetic Resonance, 49 (1982) 507-516.
  2. Edmund G. Seebauer, Edward P. Duliba, Duane A. Scogin, Robert B. Gennis and R. L Belford, “EPR Evidence on the Structure of the Copper (II)-Bacitracin A Complex,” J. Am. Chem. Soc., 105 (1983) 4926-4929.
  3. Edmund G. Seebauer, John M. Vohs and Richard I. Masel, “Effects of Artificial Protrusions on Self-Sustained Thermal Oscillations during Hydrogen Oxidation on Nickel,” Ind. Eng. Chem. Fund., 23 (1984) 19-24.
  4. E. G. Seebauer and L. D. Schmidt, “Surface Diffusion of Hydrogen on Pt(111): Laser-Induced Thermal Desorption Studies,” Chem. Phys. Lett., 123 (1986) 129-133.
  5. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, “Adsorption and Desorption of NO, CO and H2 on Pt(111): Laser-Induced Thermal Desorption Studies,” Surface Science, 176 (1986) 134-156.
  6. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, “Investigations of Adsorption on Pt and Rh by Laser-Induced Desorption,” J. Vac. Sci. Technol., A5 (1987) 464-468.
  7. S. Y. Hwang, E. G. Seebauer and L. D. Schmidt, “Decomposition of CH3NH2 on Pt(111),” Surface Science, 188 (1987) 219-234.
  8. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, “Laser-Induced Desorption of Polyatomic Molecules with a CO2 Laser,” Appl. Surface Science, 29 (1987) 380-390.
  9. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, “The Coverage Dependence of the Pre-exponential Factor for Desorption,” Surface Science, 193 (1988) 417-436.
  10. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, “Surface Diffusion of CO and Hydrogen on Rh(111): Laser-Induced Thermal Desorption Studies,” J. Chem. Phys., 88 (1988) 6597-6604.
  11. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, “Adsorption and Desorption of CO and H2 on Rh(111): Laser-Induced Desorption,” Appl. Surface Science, 31 (1988) 163-172.
  12. E. G. Seebauer, “Oxidation and Annealing of GaAs(100) Studied by Photoreflectance,” J. Appl. Phys., 66 (1989) 4963-4972.
  13. E. G. Seebauer, “Adsorption of CO, O2, and H2O on GaAs(100): Photoreflectance Studies,” J. Vac. Sci. Technol., A7 (1989) 3279-3286.
  14. P. L. Jackson and E. G. Seebauer, “Accurate Methods for Simulating Electroreflectance and Photoreflectance Spectra of GaAs,” J. Appl. Phys., 69 (1991) 943-948.
  15. K. A. Schultz and E. G. Seebauer, “Low Stress, Coolable Sample Mount for Ultrahigh Vacuum Studies of Fragile Semiconductors,” Rev. Sci. Instrum., 63 (1992) 218-219.
  16. K. A. Schultz, I. I Suni, C. E. Allen and E. G. Seebauer, “Optical Second Harmonic Study of Sb Adsorption on Ge(111),” Surface Science, 276 (1992) 40-49.
  17. K. A. Schultz and E. G. Seebauer, “Surface Diffusion of Sb on Ge(111) Monitored Quantitatively with Optical Second Harmonic Microscopy,” J. Chem. Phys., 97 (1992) 6958-6967.
  18. M. A. Mendicino and E. G. Seebauer, “Adsorption of TiCl4 on Si(100),” Surface Science, 277 (1992) 89-96.
  19. M. A. Mendicino and E. G. Seebauer, “Adsorption of Chlorine on Si(100),” Appl. Surface Science, 68 (1993) 285-290.
  20. M. A. Mendicino and E. G. Seebauer, “The Use of Teflon for Minimizing Spurious Reactions in Gas Dosing and Detection Systems,” J. Vac. Sci. Technol., A10 (1992) 3590-3592.
  21. K. A. Schultz, I. I Suni and E. G. Seebauer, “Microscopy of Adsorbates by Surface Second Harmonic Generation,” J. Opt. Soc. Am. B, 10 (1993) 546-550.
  22. M. A. Mendicino and E. G. Seebauer, “Adsorption of TiCl4, SiH4 and HCl on Si(100):  Application to TiSi2 CVD and Si Etching,” J. Electrochem. Soc., 140 (1993) 1786-1793.
  23. M. A. Mendicino and E. G. Seebauer, “Detailed In-Situ Monitoring of Film Growth:  Application to TiSi2 CVD”, J. Crystal Growth, 134 (1993) 377-385.
  24. C. R. Carlson, W. F. Buechter, F. Che-Ibrahim and E. G. Seebauer, “Adsorption/Desorption Kinetics of H2O on GaAs(100) Measured by Photoreflectance,” J. Chem. Phys., 99 (1993) 7190-7197.
  25. I. I. Suni and E. G. Seebauer, “A New Physical Picture for Surface Diffusion at High Temperatures,” Surface Science, 301 (1994) L235-238.
  26. I. I. Suni and E. G. Seebauer, “Surface Diffusion of In on Ge(111) Studied by Optical Second Harmonic Microscopy,” J. Chem. Phys., 100 (1994) 6772-6777.
  27. E. G. Seebauer, “Quantitative Extraction of Continuous Distributions of Energy States and Pre-exponential Factors from Thermal Desorption Spectra,” Surface Science, 316 (1994) 391-405.
  28. M. A. Mendicino and E. G. Seebauer, “Kinetics of Salicide Contact Formation for Thin-Film SOI Transistors,” J. Electrochem. Soc., 142 (1995) L28-L29.
  29. R. P. Southwell and E. G. Seebauer, “Differential-Conversion Temperature Programmed Desorption: A New Method for Obtaining Bimolecular Surface Rate Constants,” Surface Science, 340 (1995) 281-292.
  30. C. E. Allen and E. G. Seebauer, “Surface Diffusion of Sb on Si(111) Measured by Second Harmonic Microscopy,” Langmuir, 11 (1995) 186-190.
  31. R. P. Southwell and E. G. Seebauer, “SiH4 on TiSi2:  An Investigation of Gas Adsorption on Metal-like Compounds,” Surface Science, 329 (1995) 107-114.
  32. R. P. Southwell and E. G. Seebauer, “Adsorption of TiCl4 on TiSi2:  Application to Silicide Chemical Vapor Deposition,” J. Vac. Sci. Technol., A13 (1995) 221-229.
  33. R. Ditchfield, M. A. Mendicino and E. G. Seebauer, “Adsorption of Chlorine on TiSi2:  Application to Etching and Deposition of Silicide Films,” J. Electrochem. Soc., 143 (1996) 266.
  34. C. E. Allen and E. G. Seebauer, “Surface Diffusivities and Reaction Rate Constants:  Making a Quantitative Experimental Connection,” J. Chem. Phys., 104 (1996) 2557-2565.
  35. C. E. Allen, R. Ditchfield and E. G. Seebauer, “Surface Diffusion of In on Si(111):  Evidence for Surface Ionization Effects,” J. Vac. Sci. Technol., A14 (1996) 22-29.
  36. R. P. Southwell and E. G. Seebauer, “A Predictive Kinetic Model for the Chemical Vapor Deposition of TiSi2,” J. Electrochem. Soc., 143 (1996) 1726-1736.
  37. D. A. Hansen, M. R. Halbach and E. G. Seebauer, “Experimental Measurements of Fast Adsorption Kinetics of H2 on Vicinal Si(100) and (111) Surfaces,” J. Chem. Phys., 104 (1996) 7338-7343.
  38. H. Idriss and E. G. Seebauer, “Fast Photoreactions of Oxygenates on Tropospheric Fly Ash Particles,” J. Vac. Sci. Technol., A14 (1996) 1627-1632.
  39. H. Idriss and E. G. Seebauer, “Photoreactions of Ethanol and MTBE on Metal Oxide Particles in the Troposphere,” Catalysis Today, 33 (1997) 215-225.
  40. R. Ditchfield and E. G. Seebauer, “Rapid Thermal Processing: Fixing Problems with the Concept of Thermal Budget,” J. Electrochem. Soc., 144 (1997) 1842-1849.
  41. C. E. Allen, R. Ditchfield and E. G. Seebauer, “Surface Diffusion of Ge on Si(111):  Experiment and Simulation,” Phys. Rev. B, 55, (1997) 13,304-13,313.
  42. R. P. Southwell and E. G. Seebauer, “Kinetics of TiSi2 Formation and Silicon Consumption during Chemical Vapor Deposition,” J. Electrochem. Soc., 144 (1997) 2122-2136.
  43. R. P. Southwell and E. G. Seebauer, “Practical Processing Issues in Titanium Silicide CVD,” Appl. Surf. Sci., 119 (1997) 41-49.
  44. R. Ditchfield, D. Llera-Rodríguez, and E. G. Seebauer, “Nonthermal Effects of Photon Illumination on Surface Diffusion,” Phys. Rev. Lett., 81 (1998) 1259-1262.
  45. H. Idriss and E. G. Seebauer, “Photooxidation of Ethanol on Fe-Ti Oxide Particulates,” Langmuir, 14 (1998) 6146-6150.
  46. E. R. Blomiley and E. G. Seebauer, “Temperature Programmed Desorption of NO Photoadsorbed on Cl-treated Fe2O3,” Langmuir, 15 (1999) 5970-5976.
  47. E. R. Blomiley and E. G. Seebauer, “Manipulating Photoadsorption Kinetics: NO on Cl-treated Fe2O3,” J. Phys. Chem. B, 103 (1999) 5035-5041.
  48. R. Ditchfield and E. G. Seebauer, “Direct Measurement of Ion-Influenced Surface Diffusion,” Phys. Rev. Lett., 82 (1999) 1185-1188.
  49. Hua. Fang, Mehmet C. Ozturk, E. G. Seebauer and D. E. Batchelor, “Effects of Arsenic Doping on Chemical Vapor Deposition of Titanium Silicide,” J. Electrochem. Soc., 146 (1999) 4240-4245.
  50. H. Idriss and E. G. Seebauer, “Reactions of Ethanol on Metal Oxides,” J. Molec. Catal. A, 152 (2000) 201-212.
  51. H. Idriss and E. G. Seebauer, “Effect of Oxygen Electronic Polarizability on Catalytic Reactions over Oxides,” Catal. Lett., 66 (2000) 139-145.
  52. R. Ditchfield, D. Llera-Rodríguez and E. G. Seebauer, “Semiconductor Surface Diffusion: Nonthermal Effects of Photon Illumination,” Phys. Rev. B, 61 (2000) 13,710-13,720.
  53. R. Ditchfield and E. G. Seebauer, “Semiconductor Surface Diffusion: Effects of Low-Energy Ion Bombardment,” Phys. Rev. B, 63 (2001) 1153-1162.
  54. Z. Wang and E. G. Seebauer, “Estimating Pre-exponential Factors for Desorption from Semiconductors: Consequences for a Priori Process Modeling,” Appl. Surface Sci., 181 (2001) 111-120.
  55. Hua Fang, Mehmet C. Ozturk, E. G. Seebauer and D. E. Batchelor, “Arsenic Redistribution during Rapid Thermal Chemical Vapor Deposition of TiSi2 on Si,” J. Electrochem. Soc., 148 (2001) G43-G49.
  56. A. S. Dalton, D. Llera-Hurlburt and E. G. Seebauer, “Surface Diffusion Kinetics on Amorphous Silicon,” Surface Sci., 494 (2001) L761-L766.
  57. D. Llera-Hurlburt, A. S. Dalton and E. G. Seebauer, “Temperature-Dependent Surface Diffusion Parameters on Amorphous Materials,” Surface Sci., 504 (2002) 244-252.
  58. Z. Wang and E. G. Seebauer, “Extraordinary Temperature Amplification in Ion-Stimulated Surface Processes at Low Energies,” Phys. Rev. B., 66 (2002) 205409.
  59. Ho Yeung, H. Chan, Kapil Dev and E. G. Seebauer, “Vacancy Charging on Si(100)-(2´1): Consequences for Surface Diffusion and STM Imaging,” Phys. Rev. B, 67 (2003) 035311.
  60. Kapil Dev and E. G. Seebauer, “Surface Vacancy Charging on Semiconductors at Nonzero Temperatures,” Phys. Rev. B, 67 (2003) 035312.
  61. Kapil Dev and E. G. Seebauer, “Vacancy Charging on Si(111)–(7´7) Investigated by Density Functional Theory, Surface Sci., 538 (2003) L495-L499.
  62. R. Gunawan, M. Y. L. Jung, E. G. Seebauer and R. D. Braatz, “Maximum A Posteriori Estimation of Transient Enhanced Diffusion Energetics,” AIChE J., 49 (2003) 2114-2123.
  63. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, “Parameter Sensitivity Analysis of Boron Activation and Transient Enhanced Diffusion in Silicon,” J. Electrochem. Soc., 150 (2003) G758-G765.
  64. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, “A Simplified Picture for Transient Enhanced Diffusion of Boron in Silicon,” J. Electrochem. Soc., 151 (2004) G1-G7.
  65. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, “Ramp-Rate Effects on Transient Enhanced Diffusion and Dopant Activation: a Simple Explanation,” J. Electrochem. Soc., 150 (2003) G838-G842.
  66. Kapil Dev, M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, “Mechanism for Coupling between Properties of Interfaces and Bulk Semiconductors,” Phys. Rev. B, 68 (2003) 195311.
  67. R. Gunawan, M. Y. L. Jung, E. G. Seebauer and R. D. Braatz, “Optimal Control of Rapid Thermal Annealing in a Semiconductor Process,” J. Process Control, 14 (2004) 270-278.
  68. A. S. Dalton and E. G. Seebauer, “Structure and Mobility on Amorphous Silicon Surfaces,” Surface Sci., 550 (2004) 140-148.
  69. S. H. Tey, K. Prasad, K. C. Tee, L. H. Chan and E. G. Seebauer, “Nonlinear Optical Studies of Cu Diffusion at Surfaces and Interfaces of Microelectronic Interconnect Structures,” Thin Solid Films, 466 (2004) 217-224.
  70. J. C. Ganley, E. G. Seebauer and R. I. Masel, “Porous Anodic Alumina Posts as a Catalyst Support in Microreactors for Production of Hydrogen from Ammonia,” AIChE J., 50 (2004) 829-834.
  71. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, “Effect of Near-Surface Band Bending on Dopant Profiles in Ion-Implanted Silicon,” J. Appl. Phys., 95 (2004) 1134-1140.
  72. Kapil Dev and E. G. Seebauer, “Band Bending at the Si(111)-SiO2 Interface Induced by Low-Energy Ion Bombardment,” Surface Sci., 550 (2004) 185-191.
  73. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, “Pair Diffusion and Kick-out: Quantifying Relative Contributions to Diffusion of Boron in Silicon,” AIChE J., 50 (2004) 3248-3256.
  74. Jason C. Ganley, Kate L. Riechmann, Edmund G. Seebauer and Richard I. Masel, “Porous Anodic Alumina as a Catalyst Support for Microreactors,” J. Catal., 227 (2004) 26-32.
  75. J. C. Ganley, E. G. Seebauer and R. I. Masel, “Development of a Microreactor for the Production of Hydrogen from Ammonia,” J. Power Sources, 137 (2004) 53-61.
  76. Kapil Dev and E. G. Seebauer, “Vacancy Charging on Si(111)–“1´1” Investigated by Density Functional Theory,” Surface Science, 572 (2004) 483-489.
  77. M. Y. L. Jung, Charlotte T. M. Kwok, Richard D. Braatz and E. G. Seebauer, “Interstitial Charge States in Boron-Implanted Silicon,” J. Appl. Phys., 97 (2005) 063520(1-5).
  78. Kapil Dev and E. G. Seebauer, “Band Bending at the Si(100)-Si3N4 Interface Studied by Photoreflectance Spectroscopy,” Surface Science, 583 (2005) 80-87.
  79. Z. Wang and E. G. Seebauer, “Temperature-Dependent Energy Thresholds for Ion-Stimulated Defect Formation in Solids,” Phys. Rev. Lett., 95 (2005) 015501(1-4).
  80. Charlotte T. M. Kwok, Kapil Dev, Richard D. Braatz and E. G. Seebauer, “A Method for Quantifying Annihilation Rates of Bulk Point Defects at Surfaces,” J. Appl. Phys., 98 (2005) 013524.
  81. Zheng Ni, E. G. Seebauer and Richard I. Masel, “Effects of Microreactor Geometry On Conversion: Differences Between Posted Reactors and Channel Reactors,” Ind. Eng. Chem. Res., 44 (2005) 4267-4271.
  82. Ramakrishnan Vaidyanathan, Michael Y. L. Jung, Richard D. Braatz and E. G. Seebauer, “Measurement of Defect-Mediated Diffusion: The Case of Silicon Self-Diffusion,” AIChE J., 52 (2006) 366-370.
  83. Vaidyanathan Subramanian, Zheng Ni, E. G. Seebauer and Richard I. Masel, “High Temperature Titania-Alumina Supports,” Ind. Eng. Chem. Res., 45 (2006) 3815-3820.
  84. Edmund G. Seebauer, Kapil Dev, Michael Y. L. Jung, Ramakrishnan Vaidyanathan, Charlotte T. M. Kwok, Joel W. Ager, Eugene E. Haller and Richard D. Braatz, “Controlling Defect Concentrations in Bulk Semiconductors through Surface Adsorption,” Phys. Rev. Lett., 97 (2006) 055503(1-4).
  85. Ramakrishnan Vaidyanathan, Houda Graoui, Majeed Foad and Edmund G. Seebauer, “Influence of Surface Adsorption in Improving Ultrashallow Junction Formation,” Appl. Phys. Lett., 89 (2006) 152114.
  86. Xiao Zhang, Min Yu, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan, Richard D. Braatz and Edmund G. Seebauer, “Precursor Mechanism for Interaction of Bulk Interstitial Atoms with Si(100),” Phys. Rev. B, 74 (2006) 235301.
  87. A. S. Dalton and E. G. Seebauer, “An Improved Theory for Temperature-Dependent Arrhenius Parameters in Mesoscale Surface Diffusion,” Surface Sci., 601 (2007) 728-734.
  88. Z. Wang and E. G. Seebauer, “Temperature-Dependent Energy Thresholds for Ion-Stimulated Defect Formation in Solids: Effects of Ion Mass and Substrate,” Surface Sci., 601 (2007) 2453-2458.
  89. Vaidyanathan Subramanian, Jieun Choi, E. G. Seebauer and R. I. Masel, “TiO2-Al2O3 as a Support for Partial Oxidation of Propane,” Catal. Lett., 113 (2007) 13-18.
  90. S. H. Yeong, M. P. Srinivasan, B. Colombeau, Lap Chan, Ramam Akkipeddi, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan and Edmund G. Seebauer, Defect Engineering by Surface Chemical State in Boron-Doped Pre-amorphized Silicon, Appl. Phys. Lett., 91 (2007) 102112.
  91. Ramakrishnan Vaidyanathan, Michael Y. L. Jung and Edmund G. Seebauer, “Mechanism and En-ergetics of Self-Interstitial Formation and Diffusion in Silicon,” Phys. Rev. B, 75 (2007) 195209.
  92. K. E. Thurman, Y. V. Kondratenko and E. G. Seebauer, “Synthesis and Characterization of Amorphous TiO2 Films,” Illinois J. of Undergraduate Research, 3 (2008) 11-18.
  93. Vaidyanathan Subramanian, Nicolas Ndiege, Edmund G. Seebauer, Mark A. Shannon and Richard I. Masel, “Synthesis of Tantalum Pentoxide Films for High-Temperature Photonic Bandgap Applications,” Thin Solid Films, 516 (2008) 4784-4792.
  94. Charlotte T. M. Kwok, Kapil Dev, Edmund G. Seebauer and Richard D. Braatz, “Maximum A Posteriori Estimation of Activation Energies that Control Silicon Self-diffusion,” Automatica, 44 (2008) 2241-2247.
  95. Charlotte T. M. Kwok, Richard D. Braatz, Silke Paul, Wilfried Lerch and Edmund G. Seebauer, “Mechanistic Benefits of Millisecond Annealing for Diffusion and Activation of Boron in Silicon,” J. Appl. Phys., 105 (2009) 063514.
  96. Charlotte T. M. Kwok, Richard D. Braatz, Silke Paul, Wilfried Lerch and Edmund G. Seebauer, “An Improved Model for Boron Diffusion and Activation in Silicon,” AIChE J., 56 (2010) 515-521.
  97. Charlotte T. M. Kwok, Brandon J. Reizman, Daniel E. Agnew, Gurjit S. Sandhu, J. Weistroffer, Michael S. Strano, and Edmund G. Seebauer, “Temperature and Time Dependence of Single-Walled Carbon Nanotubes Growth by Catalytic Chemical Vapor Deposition,” Carbon, 48 (2010) 1279-1288.
  98. Andrew S. Dalton, Yevgeniy V. Kondratenko and Edmund G. Seebauer, “Diffusion Mechanisms on Amorphous Silicon Surfaces,” Chem. Eng. Sci., 65 (2010) 2172-2176.
  99. Yevgeniy V. Kondratenko and Edmund G. Seebauer, "Directed Self-Assembly by Photostimulation of an Amorphous Semiconductor Surface,” AIChE J., 56 (2010) 3206-3211.
  100. Kejia Chen, Ramakrishnan Vaidyanathan, Edmund G. Seebauer, and Richard D. Braatz, "General expression for Effective Diffusivity of Foreign Atoms Migrating via a Fast Intermediate,"J. Appl. Phys., 107 (2010) 026101.
  101. Meredith C. K. Sellers and Edmund G. Seebauer, "Measurement Method for Carrier Concentration in TiO2 via the Mott-Schottky Approach," Thin Solid Films, 519 (2011) 2103-2110.
  102. Meredith C. K. Sellers and Edmund G. Seebauer, "Structural and Magnetic Properties of Mn-doped Anatase TiO2 films Synthesized by Atomic Layer Deposition, Appl. Phys. A, 104 (2011) 583-6.
  103. Navaneetha Krishnan Nandakumar and Edmund G. Seebauer, "Low Temperature Chemical Vapor Deposition of Nanocrystalline V2O5 Thin Films, Thin Solid Films, 519 (2011) 3663-3668.
  104. Ramakrishnan Vaidyanathan, Susan Felch, Houda Graoui, Majeed A. Foad, Yevgeniy Kondratenko and Edmund G. Seebauer, Nonthermal Illumination Effects on Ultra-shallow Junction Formation, Appl. Phys. Lett., 98 (2011) 194104.
  105. Edmund G. Seebauer, Michael Y. L. Jung, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan, and Yevgeniy V. Kondratenko, “Measurement of Photostimulated Self-Diffusion in Silicon,” J. Appl. Phys., 109 (2011) 103708.
  106. Meredith C. K. Sellers and Edmund G. Seebauer.  “Manipulation of Polycrystalline TiO2 Carrier Concentration via Electrically Active Native Defects,” J. Vac. Sci. Technol. A29 (2011) 061503.
  107. Prashun Gorai, Yevgeniy V. Kondratenko and Edmund G. Seebauer, “Mechanisms and Kinetics of Near-surface Dopant Pile-up in Post-implant Annealing,” J. Appl. Phys., 111 (2012) 094510.
  108. Prashun Gorai, Alice G. Hollister and Edmund G. Seebauer, “Measurement of Defect-Mediated Oxygen Self-Diffusion in Metal Oxides,” ECS J. Solid State Sci. Technol., 1 (2012) Q21-Q24.
  109. Meredith C. K. Sellers and Edmund G. Seebauer, “Investigation of Nanostructured TiO2 Surface and Interface Electric fields with Photoreflectance Spectroscopy,” AIChE J., 59 (2013) 1049-1055.
  110. Yevgeniy Kondratenko and Edmund G. Seebauer, “Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon,” ECS J. Solid State Sci. Technol., 2 (2013) P235-P242.
  111. Alice G. Hollister, Prashun Gorai and Edmund G. Seebauer, “Surface-Based Manipulation of Point Defects in Rutile TiO2, Appl. Phys. Lett., 102 (2013) 231601.
  112. Prashun Gorai, Alice G. Hollister and Edmund G. Seebauer, “Electrostatic Drift Effects on Near-Surface Defect Distribution in TiO2,” Appl. Phys. Lett., 103 (2013) 141601.
  113. Meredith C. K. Sellers and Edmund G. Seebauer, "Room Temperature Ferromagnetism in Mn-doped TiO2 Nanopillar Matrices," Mater. Lett., 114 (2014) 44-47.
  114. Y. P. Gavin Chua, G. T. Kasun Kalhara Gunasooriya, Mark Saeys and Edmund G. Seebauer, “Controlling the CO Oxidation Rate over Pt/TiO2 Catalysts by Defect Engineering of the TiO2 Support,” J. Catalysis, 311 (2014) 306-313.
  115. Navaneetha Nandakumar and Edmund G. Seebauer, “Relating Catalytic Activity of d0 Semi-conducting Metal Oxides to the Fermi Level Position,” J. Phys. Chem. C, 118 (2014) 6873-6881.
  116. Prashun Gorai, Alice G. Hollister, Kristine Pangan-Okimoto and Edmund G. Seebauer, “Kinetics of Oxygen Interstitial Injection and Lattice Exchange in Rutile TiO2,” Appl. Phys. Lett., 104 (2014) 191602.
  117. Prashun Gorai and Edmund G. Seebauer, “Kinetic Model for Electric-Field Induced Point Defect Redistribution near Semiconductor Surfaces,” Appl. Phys. Lett., 105 (2014) 021604.
  118. Kathryn F. Trenshaw, Jerrod A. Henderson, Marina Miletic, Edmund G. Seebauer, Ayesha S. Tillman, and Troy J. Vogel, “Integrating Team-Based Design Across the Curriculum at a Large Public University,” Chemical Engineering Education, 48 (2014) 139-148.
  119. D. Eitan Barlaz and Edmund G. Seebauer, “Manipulation of Carrier Concentration, Crystallite Size and Bulk Density in Polycrystalline Anatase TiO2 via Amorphous-Phase Medium Range Atomic Order,” CrystEngComm, 17 (2015) 2101-9.
  120. Kathryn F. Trenshaw, Joseph W. Schlude, Marina Miletic, Ayesha S. Tillman, Troy J. Vogel, Jerrod A. Henderson and Edmund G. Seebauer, “Chemical Engineering Design Projects Across the Curriculum at a Large Research-Intensive Public University,” Int’l J. Engineering Education, 31 (2015) 1352-1375.
  121. Kristine Pangan-Okimoto, Prashun Gorai, Alice G. Hollister and Edmund G. Seebauer, “Mechanisms of Surface Oxygen Interstitial Injection and Lattice Exchange in Rutile TiO2,” J. Phys. Chem. C, 119 (2015) 9955–9965.
  122. S. W. Daniel Ong, Jianyi Lin and Edmund G. Seebauer, “Control of Methylene Blue Photo-oxidation Rate over Polycrystalline Anatase TiO2 Thin Films via Carrier Concentration,” J. Phys. Chem. C, 119 (2015) 11662–11671.
  123. S. W. Daniel Ong, Jianyi Lin and Edmund G. Seebauer, “Control of Photoactivity over Polycrystalline Anatase TiO2 Thin Films via Surface Potential,” J. Phys. Chem. C, 119 (2015) 27060-27071.
  124. Meredith C. K. Sellers and Edmund G. Seebauer, “Persistent Illumination-Induced Changes in Polycrystalline TiO2 Majority Carrier Concentration,” Mater. Lett., 162 (2016) 20-23.
  125. Ming Li and Edmund G. Seebauer, “Defect Engineering in Semiconducting Oxides: Control of ZnO Surface Potential via Temperature and Oxygen Pressure,” AIChE J. (inaugural topical issue), 62 (2016) 500-507.
  126. D. Eitan Barlaz and Edmund G. Seebauer, “Solid Phase Epitaxial Regrowth of (001) Anatase Titanium Dioxide,” J. Vac. Sci. Technol. A, 34 (2016) 020603.
  127. Navaneetha Nandakumar and Edmund G. Seebauer, “Manipulating Surface Potentials of Metal Oxides Using Semiconductor Heterojunctions,” J. Phys. Chem. C, 120 (2016) 5486-5494.
  128. Prashun Gorai, Edmund G. Seebauer and Elif Ertekin, Mechanism and Energetics of Molecular Oxygen Adsorption on Zinc Oxide Surfaces,” J. Chem. Phys., 144 (2016) 184708. 
  129. Prashun Gorai, Elif Ertekin and Edmund G. Seebauer, Manipulation of Point Defects within Metal Oxide Semiconductors via Surface Polarity,” Appl. Phys. Lett., 108 (2016) 241603.
  130. Ming Li and Edmund G. Seebauer, “Surface-based Control of Oxygen Interstitial Injection into ZnO via Sub-monolayer Sulfur Adsorption,” J. Phys. Chem. C, 120 (2016) 23675-23682.
  131. Ming Li and Edmund G. Seebauer, “Coverage-Dependent Adsorption Thermodynamics of Oxygen on ZnO(0001),” Appl. Surface Sci., 397 (2017) 220-225.
  132. Prashun Gorai and Edmund G. Seebauer, “Electric Field-Driven Point Defect Redistribution near ZnO (0001) Surfaces,” Solid State Ionics, 301 (2017) 95-98.
  133. G. T. Kasun Kalhara Gunasooriya, Edmund G. Seebauer, and Mark Saeys, “Ethylene Hydrogenation over Pt/TiO2: A Charge-Sensitive Reaction,” ACS Catalysis, 7 (2017) 1966-1970.
  134. Kandis Leslie Gilliard and Edmund G. Seebauer, “Manipulation of Native Point Defect Behavior in Rutile TiO2,” J. Phys. Cond. Matter, 29 (2017) 445002.
  135. D. Eitan Barlaz, Richard T. Haasch and Edmund G. Seebauer, “Epitaxial SrRuO3/SrTiO3(100) Analyzed using X-ray Photoelectron Spectroscopy,” Surface Science Spectra, 24 (2017) 024002.
  136. Ming Li and Edmund G. Seebauer, “Microkinetic Model for Oxygen Interstitial Injection from ZnO(0001) into the Bulk,” J. Phys. Chem. C, 122 (2018) 2127-2136.
  137. Kandis Leslie Gilliard-AbdulAziz and Edmund G. Seebauer, “Microkinetic Model for Reaction and Diffusion of Titanium Interstitial Atoms near a TiO2(110) Surface,” Phys. Chem. Chem. Phys., 20 (2018) 4587-4596.
  138. D. Eitan Barlaz and Edmund G. Seebauer, “Photocarrier Transport Mechanisms in Amorphous and Epitaxial TiO2/SrRuO3 Heterojunction Photocatalysts,” J. Phys. Chem. C, 122 (2018) 15688-15695.
  139. Heonjae Jeong, Edmund G. Seebauer, and Elif Ertekin, “First-Principles Description of Oxygen Self-Diffusion in Rutile TiO2: Assessment of Uncertainties due to Energy and Entropy Contributions,” Phys. Chem. Chem. Phys., 20 (2018) 17448-17457.
  140. Navaneetha K. Nandakumar and Edmund G. Seebauer, “Manipulating Reaction Rates of Metal-Oxide Heterogeneous Catalysts via Semiconductor Heterojunctions,” J. Phys. Chem. C, 122 (2018) 16655–16663.
  141. Kandis Leslie Gilliard-AbdulAziz and Edmund G. Seebauer, “Microkinetic Model for Reaction and Diffusion of Oxygen Interstitial Atoms near a TiO2(110) Surface,” Appl. Surf. Sci., 470 (2019) 854-860.
  142. Heonjae Jeong, Edmund G. Seebauer and Elif Ertekin, “Fermi Level Dependence of Gas-Solid Oxygen Defect Exchange Mechanism on TiO2(110) by First Principles Calculations,” J. Chem. Phys., 153 (2020) 124710.
  143. Heonjae Jeong, Elif Ertekin and Edmund G. Seebauer, “Kinetic Control of Oxygen Interstitial Interaction with TiO2(110) via the Surface Fermi Energy,” Langmuir, 36 (2020) 12632-12648.
  144. Heonjae Jeong, Elif Ertekin and Edmund G. Seebauer, “Creation and Destruction of Oxygen Interstitial Atoms by Nonpolar Zinc Oxide(10-10) Surfaces,” Phys. Chem. Chem. Phys., 23 (2021) 16423-16435.
  145. Qilong Huang and Edmund G. Seebauer, "Electric Field Manipulation for Improved Rates of Photocatalysis by Mesoporous TiO2," J. Phys. Chem. C, 126 (2022) 1376-1388.
  146. Heonjae Jeong, Elif Ertekin and Edmund G. Seebauer, “Surface-Based Post-synthesis Manipulation of Point Defects in Metal Oxides Using Liquid Water,” ACS Appl. Mater. Interfaces, 14 (2022) 34059-34068.
  147. Heonjae Jeong and Edmund G. Seebauer, “Strong Isotopic Fractionation of Oxygen in TiO2 Obtained by Surface-Enhanced Solid-State Diffusion,” J. Phys. Chem. Lett., 13 (2022) 9841-9847.
  148. Heonjae Jeong and Edmund G. Seebauer, “Effects of Ultraviolet Illumination on Oxygen Interstitial Injection from TiO2 under Liquid Water,” J. Phys. Chem. C, 126 (2022) 20800-20806.
  149. Heonjae Jeong and Edmund G. Seebauer, "Effects of Adventitious Impurity Adsorption on Oxygen Interstitial Injection Rates from Submerged TiO2 and ZnO(0001) Surfaces," J. Vac. Sci. Technol. A, 41 (2023) 033203.


Conference Proceedings

  1. E. G. Seebauer, J. J. Foster, W. F. Banholzer and R. I. Masel, “Ignition Instabilities in Catalytic Combustion,” Proc. of the Fifth Workshop on Catalytic Combustion (EPA) (1982) 134-152.
  2. E. G. Seebauer and L. D. Schmidt, “Laser-Induced Desorption Determinations of Surface Diffusion on Rh(111),” Diffusion at Interfaces: Microscopic Concepts, M. Grunze, H. J. Kreuzer, and J. J. Weimer, eds. (Springer-Verlag, Berlin, 1988) p. 37-42.
  3. E. G. Seebauer and L. D. Schmidt, “Experimental Measurements of Hydrogen and CO Surface Diffusion on Rhodium,” Diffusion and Convection in Porous Catalysts (AIChE Symposium Series, Vol. 84, No. 266, 1988) 1-9.
  4. Michael A. Mendicino and Edmund G. Seebauer, “A Predictive Chemical Model for TiSi2 CVD,” Proc. of Techcon 1993 (Semiconductor Research Corporation), 103-105.
  5. M. A. Mendicino, R. P. Southwell and E. G. Seebauer, “Predictive Surface Kinetic Analysis: The Case of TiSi2 CVD,” Gas-Phase and Surface Chemistry in Electronic Materials Processing, (MRS Vol. 334, 1994), p. 63-68.
  6. I. I. Suni and E. G. Seebauer, “A New Physical Picture for Surface Diffusion at High Temperatures,” Mechanisms of Thin Film Evolution (MRS Vol. 317, 1994), p. 21-26.
  7. R. Ditchfield and E. G. Seebauer, “General Kinetic Rules for Rapid Thermal Processing,” Rapid Thermal and Integrated Processing V (MRS Vol. 429, 1996), 133-138.
  8. R. Ditchfield and E. G. Seebauer, “Problems with the Concept of Thermal Budget:  Experimental Demonstrations, Rapid Thermal and Integrated Processing VI (MRS Vol. 470, 1997), 313-318.
  9. Hua Fang, Mehmet C. Ozturk and E. G. Seebauer, “Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon,” Rapid Thermal and Integrated Processing VIII (MRS Vol. 514, 1998) 231-236.
  10. R. Ditchfield and E. G. Seebauer, “Beyond Thermal Budget: Using D·t in Kinetic Optimization of RTP,” Rapid Thermal and Integrated Processing VII (MRS Vol. 525, 1998), 57-62.
  11. E. G. Seebauer, “Spike Anneals in RTP: Kinetic Analysis,” Advances in Rapid Thermal Processing (ECS Vol. 99-10, 1999) 67-71.
  12. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, “New Physics for Modeling Transient Enhanced Diffusion in RTP,” Rapid Thermal and Other Short-Time Processing Technologies II (ECS Vol. 2000-9, 2000) 15-20.
  13. K. Dev and E. G. Seebauer, “Measurement of Fermi Pinning at Si-SiO2 Interfaces: Implications for TED Spike Anneals,” Rapid Thermal and Other Short-Time Processing Technologies III (ECS Vol. PV-2002-11, 2002) 357-362.
  14. M. Y. L. Jung and E. G. Seebauer, “Measurement of Nonthermal Illumination-Enhanced Diffusion in Silicon,” Rapid Thermal and Other Short-Time Processing Technologies III (ECS Vol. 2002-11, 2002) 363-368.
  15. M. A. Shannon, G. V. Moore, J. C. Ganley, C. M. Miesse, C. A. Rice, E. G. Seebauer and R. I. Masel, “High-temperature Microcombustion-based Ammonia Microchemical Hydrogen Generator Reactors for PEM Fuel Cells,” Proc. of Workshop on Solid State Sensors, Actuators, and Microsystems (2002) 27-30.
  16. J. C. Ganley, E. G. Seebauer and R. I. Masel, “Microreactors for Fuel Conversion,” Proc. of the 40th Power Sources Conference (2002) 367-370.
  17. M. Y. L. Jung and E. G. Seebauer, “Measurement of Nonthermal Illumination-Enhanced Diffusion in Silicon,” Proc. of the 10th IEEE Int’l Conference on Advanced Thermal Processing of Semiconductors (IEEE, 2002) 133-136.
  18. R. Gunawan, M. Y. L. Jung, R. D. Braatz and E. G. Seebauer, “Systems Analysis Applied to Modeling Dopant Activation and TED in Rapid Thermal Annealing,” Proc. of the 10th IEEE Int’l Conference on Advanced Thermal Processing of Semiconductors (IEEE, 2002) 107-110.
  19. S. H. Tey, K. Prasad, E. G. Seebauer and L. Chan, “Measurement of Copper Interface Diffusion by Second Harmonic Generation,” Proc. of the 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, (IEEE, 2003) 523-526.
  20. R. D. Braatz, R. C. Alkire, E. G. Seebauer, T. O. Drews, R. Gunawan and M. Y. L. Jung, “Systems Engineering of Materials Manufacturing Processes at the Nanoscale,” Proc. 3rd Chemical Engineering Conference for Collaborative Research in the Eastern Mediterranean, (2003) W-4.3.
  21. K. Dev, R. Gunawan, M. Y. L. Jung, R. D. Braatz and E. G. Seebauer, “Measurement of Fermi Pinning at Si-SiO2 Interfaces: Implications for TED Spike Anneals,” Proc. 7th Int’l Workshop on the Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semiconductors (2003) 383-9.
  22. R. Gunawan, M. Y. L. Jung, R. D. Braatz and E. G. Seebauer, “Systems Analysis Applied to Modeling TED and Dopant Activation in Rapid Thermal Annealing,” Proc. 7th Int’l Workshop on the Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semiconductors (2003) 393-8.
  23. R. Gunawan, M. Y. L. Jung, E. G. Seebauer and R. D. Braatz, “Optimal Control of Transient Enhanced Diffusion,” Proc. IFAC Symp. on Advanced Control of Chemical Processes (Hong Kong, 2004) 603-608.
  24. R. D. Braatz, R. C. Alkire, E. G. Seebauer, E. Rusli, R. Gunawan, T. O. Drews, X. Li and Y. He, “Perspectives on the Dynamics and Control of Multiscale Systems,” Proc. Int’l Symp. on Dynamics and Control of Process Systems (2004) paper 96.
  25. E. G. Seebauer, “Surface Control of Interstitial Behavior for Improved Ultrashallow Junction Formation,” Proc. Fourth Int’l Workshop on Junction Technology (Fudan Univ. Press, Shanghai, 2004) 81-86.
  26. M. Y. L. Jung and E. G. Seebauer, “Measurement of Nonthermal Illumination-Enhanced Self-Diffusion in Silicon,” Proc. Fourth Int’l Workshop on Junction Technology (Fudan Univ. Press, Shanghai, 2004) 87-89.
  27. Jason C. Ganley, Richard Z. Ni, Edmund G. Seebauer and Richard I. Masel, “Porous Alumina Microreactors for the Production of Hydrogen from Ammonia,” Proc. of the 42nd Power Sources Conference (2004) 257-260.
  28. K. Dev and E. G. Seebauer, “Influence of Surface Chemistry on Ultrashallow Junction Formation,” Advanced Short-Time Processing for Si-based CMOS Devices II (ECS Vol. PV-2004-1, 2004) 66-70.
  29. E. G. Seebauer, “New Mechanisms Governing Diffusion in Silicon for Transistor Manufacture,” Proc. Seventh Int’l Conference on Solid-State and Integrated Circuit Technology (IEEE, Piscataway, NJ, 2004) 1032-1037.
  30. E. G. Seebauer, “Using Surface Chemistry for Defect Engineering in Ultrashallow Junction Formation,” Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes and Equipment (ECS Vol. PV-2005-1, 2005) 33-42.
  31. Charlotte T. Kwok, Kapil Dev, Edmund G. Seebauer, and Richard D. Braatz, “Maximum A Posteriori Estimation of Energetics in Silicon Self-diffusion,” Proc. 44th IEEE Conference on Decision and Control (IEEE, Piscataway, NJ, 2005) 2058-2063.
  32. R. D. Braatz, R. C. Alkire and E. G. Seebauer, “A Multiscale Systems Approach to Microelectronic Processes,”Proc. of the Int’l Conference on Chemical Process Control (Lake Louise, Alberta, Canada, 2006) paper 55.
  33. E. G. Seebauer, “Defect Engineering in Nanoscale Semiconductors through Surface Chemistry,” Proc. NanoSingapore 2006 (IEEE, Piscataway, NJ, 2006).
  34. K. Dev, C. T. M. Kwok, R. Vaidyanathan, R. D. Braatz and E. G. Seebauer, “Controlling Dopant Diffusion and Activation through Surface Chemistry,” Proc. 16th Int’l Conference on Ion Implantation Technology (AIP, NY, 2006) 50-53.
  35. E. G. Seebauer, “Defect Engineering in Semiconductors through Adsorption and Photoexcitation,” Proc. Eighth Int’l l Conference on Solid-State and Integrated Circuit Technology, (IEEE, Piscataway, NJ, 2006) 450-453.
  36. Edmund G. Seebauer, S. H. Yeong, M. P. Srinivasan, C. T. M. Kwok, R. Vaidyanathan, Benjamin Colombeau and Lap Chan, “Defect Engineering for Ultrashallow Junctions using Surfaces,” Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment –  ECS Trans. 6  (2007) 365-372.
  37. Edmund G. Seebauer, S. H. Yeong, M. P. Srinivasan, C. T. M. Kwok, R. Vaidyanathan, Benjamin Colombeau and Lap Chan, “Defect Engineering for Ultrashallow Junctions using Surfaces,” Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment –  ECS Trans. 13  (2008) 55-62.
  38. E. G. Seebauer, C. T. M. Kwok, R. Vaidyanathan, Y. V. Kondratenko, S. H. Yeong, M. P. Srinivasan, Benjamin Colombeau and Lap Chan, “Defect Engineering for Ultrashallow Junctions using Surfaces,” Proc. 17th Int’l Conference on Ion Implantation Technology (AIP, NY, 2008) 34-37.
  39. Y. Kondratenko, C. T. M. Kwok, R. Vaidyanathan and E. G. Seebauer, “Optically Stimulated Diffusion in Ultrashallow Junction Formation,” Proc. 17th Int’l Conference on Ion Implantation Technology (AIP, NY, 2008) 228-231.
  40. Edmund G. Seebauer, “Surfaces and Interfaces for Controlled Defect Engineering,” Proc. 9th Int’l Conference on Solid-State and Integrated Circuit Technology (IEEE, Piscataway, NJ, 2008) 773-776.
  41. C. T. M. Kwok, Y. Kondratenko and E. G. Seebauer, “Improved Mechanistic Understanding of Millisecond Annealing Techniques for Ultrashallow Junction Formation,” Proc. Int’l Workshop on Insight in Semiconductor Device Fabrication, Metrology and Modeling (2009) 152-158.
  42. E. G. Seebauer, “Defect Engineering in Semiconductors for Nanoelectronic Devices,” 3rd IEEE International Nanoelectronics Conference (IEEE, Piscataway, NJ, 2010) 58-59.
  43. E. G. Seebauer and P. Gorai, “Defect Engineering at the Nanoscale: Challenges and Trends,” High Purity Silicon 12 - ECS Trans. 50 (2012) 291-302.
  44. P. Gorai, Yevgeniy V. Kondratenko and E. G. Seebauer, “Mechanism and Kinetics of Near-surface Dopant Pile-up During Post-implant Anneal,” Proc. 19th Int’l Conference on Ion Implantation Technology (AIP, NY, 2012) 253-256.
  45. Edmund G. Seebauer, “Defect Engineering via Surfaces for Metal-Oxide Electronics,” Proc. 12th Int’l Conference on Solid-State and Integrated Circuit Technology (IEEE, Piscataway, NJ, 2014) 219-222.

Contact Information
600 S. Mathews Ave. Box C-3
Urbana, IL 61801-3792
voice: (217) 244-9214, fax: (217) 333-5052
e-mail: eseebaue@illinois.edu